| PART |
Description |
Maker |
| A1425 A1425LK |
A1425 High Precision Hall Effect AC-Coupled Differential Sensor with Integrated Filter Capacitor
High Accuracy Analog Speed Sensor with Integrated Filter Capacitor and Dual Zero-Crossing Output Signal
|
ALLEGRO[Allegro MicroSystems]
Allegro MicroSystems, Inc.
|
| MAX1716 MAX1716EEG MAX1716-MAX1855 MAX1854 MAX1854 |
High-Speed / Adjustable / Synchronous Step-Down Controllers with Integrated Voltage Positioning
High-Speed, Adjustable, Synchronous Step-Down Controllers with Integrated Voltage Positioning
" High-Speed, Digitally Adjustable, Synchronous Step-Down Controller with Integrated Voltage Positioning"
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| MJE18004D2 MJE18004D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation ...
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| A1425 |
High Accuracy Analog Speed Sensor IC with Integrated Filter
|
Allegro MicroSystems
|
| CX94610 |
High Speed ADSLplus Chipset with Integrated Wireless LAN
|
Conexant Systems, Inc
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| AS8S512K32PEC-25_ET AS8S512K32PEC-25_IT AS8S512K32 |
16Mb, 512Kx32 CMOS 5.0V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit
|
Austin Semiconductor
|
| MJB18004D2T4-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network D2PAK For Surface Mount POWER TRANSISTORS 5 AMPERES 1000 VOLTS 75 WATTS
|
ON Semiconductor
|
| UPC844GR-9LG-E2-A UPC844GR-9LG-E1-A UPC4744GR-9LG |
BIPOLAR ANALOG INTEGRATED CIRCUIT SINGLE POWER SUPPLY, HIGH SPEED, WIDE BAND, QUAD OPERATIONAL AMPLIFIERS
|
NEC
|
| 5962-88724013X 5962-88724043X 5962-87539053X 5962- |
t(pd): 25ns; t(s): 18ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 17ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 25ns; t(s): 15ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; V power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 15ns; t(s): 10ns; t(co): 10ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
t(pd): 20ns; t(s): 12ns; t(co): 15ns; -2.0 to 7.0V; Vcc power supply: 5V -10%; output short circuit current: 120mA; integrated UV erase dose: 7258W sec/cm2; high speed UV erasable programmable logic device
|
Atmel
|
| K6R1008C1C- K6R1008C1C-C10 K6R1008C1C-C12 K6R1008C |
128K x 8 high speed static RAM, 5V operating, 12ns
128Kx8 Bit High-Speed CMOS Static RAM(5V Operating). Operated at Commercial and Industrial Temperature Ranges. 128Kx8位高速CMOS静态RAMV的工作）。在经营商业和工业温度范围
RES-140 0.0625W 1% THICK FILM
128K x 8 high speed static RAM, 5V operating, 15ns
128K x 8 high speed static RAM, 5V operating, 10ns
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
